NTMD5838NLR2G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTMD5838NLR2G
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:2 2.1 W 40 V Continuous Drain Current (ID):7.4 A 17 nC
| Parameter | Value |
|---|---|
| Length | 5 mm |
| Width | 4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Height | 1.5 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 2.1 W |
| Power Dissipation | 2.1 W |
| Threshold Voltage | 1.8 V |
| Number of Channels | 2 |
| Input capacitance | 785 pF |
| Continuous Drain Current (ID) | 7.4 A |
| Rds On Max | 25 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 17 ns |
| Element Configuration | Dual |
| Rise Time | 23 ns |
| Gate Charge | 17 nC |
| Drain to Source Resistance | 25 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 40 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
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